to the Professional Web-Site of DEREK W PALMER BA, MA, PhD Identity and Scientific Publications http://www.derek-palmer.uk       http://www.derek-palmer.eu contact@derek-palmer.uk                   contact@derek-palmer.eu

I was a University Physics Academic and Solid State Researcher most recemtly at the Univeristy of Exeter,UK, Physics Department and previously at the University of Sussex, UK, School of Physics and Astronomy Ecole Normale Supérieure, Paris, Framce, Laboratoire de Physique University of Reading, UK, J J Thomson Physical Laboratory I am curremtly an independent semicondor consultant.       The main theme of my pysics research has been lattice defects amd impurity atoms in crystaline solids, including their creation and incorpotation by particle and ion irradiation, and by crystal growth, and their properties and effects, and their investigation by electronic mrthods (capacitance-voltage analysis, DLTS and MCTS) and desity functiional theory calculations for semiconductors, and by ion beam methods (Rutherford back-scattering, ion chanelling and nuclear ractions) for metals. The subjects of my researh papers listed below are indicated by the various coloured symbols. If you would like a pdf copy of any those publications, please send your request to my e-mail address stated above. I shall be pleased if, with your requst, you will like to include the name of your academic or industrial organisation

My Semiconductors-Information Web-Site

Diamomd		Silicon		Germanium,
Gallium Arsenide		Gallium Phosphide     and     Indium Phosphide		BN, AlN                     GaN, InN
Niobium		ZnS and ZnTe		Iron
Atomic Diffusion           in                         Metallic Glasses		A Velocity Selector                 for                         Slow Neutrons		Oxygen Diffusion           in                         Quartz
Studies of Solids by Rutherford Back Scattering		Studies of Solids by Nuclear Reactions		Ion Channelling and Its Applications
Diffusion Data      for                             Semiconductors		Capacitance Methods   to                         Study Semiconductors		Irradiation Damage Processes     and                         Ion Implantation

Click Here to Request a PDF Copy of Any of the Papers listed Below

“Diffusion Data for Semiconductors"                 Derek W Palmer and B L Sharma, 2022 CRC Hamdbook of Chemistry amd Physics 103rd Edition, 2022-2023 (John R Rumble, Editor in Chief) Pages 12-91 to 12-100 Update of 2021 by Derek W Palmer of previous data list by B L Sharma.     This article lists the thermal activation energies, prefactors and the measurent temperatures for the diffusion of many elements in important crystalline semiconductors. Click Here to Request a PDF Copy of that Article “Diffusion of nitrogen in diamond and the formation of A-centres" R Jones, J P Goss, H Pinto and D W Palmer, 2015 28th International Conference on Defects in Semiconductors, 27-31 July 2015, Espoo, Finland “Diffusion of nitrogen in diamond and the formation of A-centres" R Jones, J P Goss, H Pinto and D W Palmer, 2015 Diamond Related Materials 53 (2015) 35-39 "Theory of the diffusion and aggregation of nitrogen in diamond" R Jones, H Pinto, D W Palmer, J P Goss and P R Briddon, 2013 Diamond Conference, Univ of Warwick, July 2013 “Ab Initio Studies of Fluorine Passivation on the Electronic Structure of the NV? Defect in Nanodiamond" H Pinto, D W Palmer, R Jones, J P Goss, P R Briddon and S Öberg, 2012 Journal of Nanoscience and Nanotechnology 12 (2012) 1–5 (Proceedings of the E-MRS Meeting held in Strasbourg, France in May 2011) "Light-induced degradation in B-doped CZ-Si solar cells" A Carvalho, P Santos, J Coutinho, R Jones, D W Palmer, M Rayson and P R Briddon, 2012 E-MRS Meeting, Strasbourg, 14-18 May 2012 "On the diffusion of NV defects in diamond" H Pinto, R Jones, D W Palmer, J P Goss , P R Briddon and S Oberg, 2012 Phys Stat Solidi – A 209 (2012) 1765-1768 (Proceedings of the Hasselt Diamond Workshop, 14-16 March 2012) “"Ab-initio study of the diffusion of NV defects in diamond" H Pinto, D W Palmer, R Jones, J P Goss, P R Briddon and S Oberg, 2012 Presented at the 63rd Diamond Conference, Univ of Warwick, 09-12 July 2012 Extended Abstract in the Conference Book "A theoretical study of the diffusion of nitrogen-vacancy defect in diamond" H Pinto, D W Palmer, R Jones, J P Goss, P R Briddon and S Oberg, 2012 Presented at the NanoTP-Theory Meeting, Aveiro, Portugal, June 2012 "First principles studies of the effect of (001) surface terminations" on the electronic properties of the negatively charged nitrogen-vacancy defect in diamond" H Pinto, R Jones, D W Palmer, J P Goss, A K Tiwari et al, 2012 Phys Rev B 86 (2012) 045313 (eight pages) "Surface effects on the luminescence of the NV- defect in diamond" H Pinto, D W Palmer, R Jones, J P Goss, P R Briddon and S Oberg, 2011 Presented at the 62nd Diamond Conference, University of Warwick, UK, 04-07 July 2011: Sumary published in the Conference Book "Ab-initio studies of surface-fluorination effect on the electronic structure of the NV defect in nanodiamond" H Pinto, D W Palmer, R Jones, J P Goss, P R Briddon and S Oberg, 2011 E-MRS Meeting, Strasbourg, France, May 2011, published in the Meeting Proceedings "Theory of the surface effects on the luminescence of the NV defect in nanodiamond"L H Pinto, R Jones, D W Palmer, J P Goss, P R Briddon and S Oberg, 2011 Phys Stat Solidi A 208 (2011) 2045-2050 Proceedings, Hasselt Diamond Workshop (SBDD XVI), Hasselt, Belgium, 21-23 February 2011, "Ab-initio studies of different surface terminations on the electronic properties of NV in diamond"L H Pinto, D W Palmer, R Jones, J P Goss, P R Briddon and S Oberg, 2011 Presented at the NanoteC11 Conference, Nantes, France, 31 August - 03 Sept 2011                         “Electronic Energy Levels in Group-III Nitrides"                                           D W. Palmer, 2011 : Invited Review Elsevier Encyclopdia" Comprehensive Semiconductor Science and Technology" (Bhattacharya P, Fornari R and Kamimura H, eds.), (Elsevier, Amsterdam, 2011), Volume 4, pp. 390-447 Click Here to Request a PDF Copy of that Review Paper. “Kinetics of the electronically stimulated formation of a boron-oxygen complex in crystalline silicon Derek W Palmer, Karsten Bothe & Jan Schmidt, 2007 Phys Rev B 75 (2007) 035210 “Electronically Stimulated Degradation of Silicon Solar Cells"L J Schmidt, K Bothe, D Macdonald, J Adey, R Jones, and D W Palmer, 2006 J. Mater. Res. 21 (2006) 5-12 (published as an "Outstanding Paper" of the MRS 2005 Spring Meeting) > "The E-Center in Silicon Has a Donor Level in the Band Gap" A Nylandsted Larsen, A Mesli, K Bonde Nielsen, H Kortegaard Nielsen, L Dobaczewski, J. Adey, R. Jones, D.W. Palmer, P. R. Briddon & S Oberg, 2006 Phys Rev Lett 97 (2006) 106402 > "Mechanisms of Light-Induced Degradation in Mono- and Multi-Crystalline Silicon Solar Cells" J Schmidt, K Bothe, D Macdonald, J Adey, R Jones, and D W Palmer, 2005 Proceedings, 20th European Photo-Voltaic Conference, 06-10 June 2005, Barcelona, Spain > "Theory of Boron-Vacancy Complexes in Silicon" J Adey, R Jones, D W Palmer, P R Briddon and S Öberg, 2005 Phys Rev B 71 (2005) 165211 > "Electronically Stimulated Degradation of Crystalline Silicon Solar Cells" J Schmidt, K Bothe, D Macdonald, J Adey, R Jones and D W Palmer, 2005 Mater. Res. Soc. Symp. Proc. 864 (2005) E6.1.1 (Proc. MRS Spring Meeting, 2005, held in San Francisco, California, USA) > "Mechanisms of Light-Induced Degradation in c-Si Solar Cells" J Schmidt, K Bothe, D Macdonald, J Adey, R Jones and D W Palmer, 2004 Proceedings, Fourth Internat. Symposium on Advanced Science & Technology of Silicon Materials 22-26 November 2004, Kona, Hawaii, USA > "Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells" J Adey, R Jones, D W Palmer, P R Briddon and S Öberg, 2004 Phys Rev Lett 93 (2004) 055504 and Erratum (correcting a printing error in a figure caption) in Phys Rev Lett 93 (2004) 169904 "Investigation of the Anomalous Signature of the (Ec-0.19eV) Defect produced in Proton-Implanted n-GaAs" W O Siyanbola and D W Palmer, 2002 Materials Engineering 13 (2002) 179-186 "Production Rate of the Electron Trap E3 in Proton-Irradiated n-GaAs Schottky Diodes" W O Siyanbola and D W Palmer, 2002 Materials Engineering 13 (2002) 89-97 "Point Defects and Non-Doping Impurities in Semiconductors" and Their Characterisation by Electrical Techniques D W Palmer, 20v01 in 'Crystal Growth of Materials for Energy Production and Energy Saving Applications' (R Fornari and L Sorba (Editors): Edizioni ETS, Italy, 2001), pages 148-171 Proceedings, International Study School, ICTP Trieste, 05-10 March 2001 "Characterization of Electroluminescent Structures based on Gallium Arsenide" Ion-Implanted with Ytterbium and Oxygen D W Palmer, V A Dravin, V M Konnov, E A Bobrova, N N LoÏko, S G Chernook and A A Gippius, 2001 Semiconductors 35 (2001) 325-330 (Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 3, 2001, pp. 339-344) "Characterisation of Semiconductor Heterostructures by Capacitance Methods" D W Palmer, 1999 Microelectronics Journal 30 (1999) 665-672v This is a shortened version of am Invited Lecture at the Journées Maghreb-Europe Conference MADICA'98 ("Les Materiaux et Leurs Applications aux Dispositifs Capteurs Physiqes, Chimiques et Biologiques") held in Monastir, Tunisia, 09-11 November 19 "Characterisation of Electroluminescent Structures of Yb-Implanted GaAs" V A Dravin, V M Konnov, D W Palmer et al, 1999 Fourth Russian Conf. on the Physics of Semiconduct ors, held in Novosibirsk, 25-29 October 1999 Abstract in Russian published in the Conference Booklet, Page 270. Full Paper Published in Russian in the Conference Proceedings, with English translation in Physics & Technology of Semiconductors (Nauka/Interperiodica, Russia) No. 3, 2001. “Information on the Nature of a Prominent Lattice Defect in LEC-Grown Indium Phosphide" A Canimoglu and D W Palmer, 1998 UK Institute of Physics Condensed Matter and Materials Physics Conference 1998 (CMMP-98) University of Manchester Institute of Science and Technology (UMIST), 21-23 December 1998 Abstract published in the Conference Handbook, Page 120 “Trigonal Symmetry of the E1 and E2 Lattice Defects in Gallium Arsenide" S J Hartnett and D W Palmer, 1997 UK Institute of Physics Condensed Matter and Materials Physics Conference 1997 (CMMP-97) University of Exeter, 17-19 December 1997. Abstract published in the Conference Handbook, Page 91 “A Sharp Defect-Annealing Stage Below Room Temperature in Irradiated N-Type Indium Phosphide" A Canimoglu and D W Palmer, 1997 Materials Science Forum 258-263 (1997) 837-842 (Proceedings of the 19th International Conference on Defects in Semiconductors (ICDS-19), held in Aveiro, Portugal, 21-25 July 1997) “Uniaxial Stress-Symmetry Studies on the E1, E2 and E3 Irradiation-Induced Defects in Gallium Arsenide" S J Hartnett and D W Palmer, 1997 Materials Science Forum 258-263 (1997) 1027-1032 (Proceedings of the 19th International Conference on Defects in Semiconductors (ICDS-19), held in Aveiro, Portugal, 21-25 July 1997) “Irradiation-Induced Lattice Defects in N-Type Indium Phosphide" A Canimoglu and D W Palmer, 1996 UK Institute of Physics Condensed Matter and Materials Physics Conference 1996 (CMMP-96) University of York, 17-19 December 1996: Abstract published in the Conference Handbook, Page 130, “Uniaxial Stress Studies on Irradiation-Induced Defects in Gallium Arsenide" S J Hartnettt and D W Palmer, 1996 UK Institute of Physics Condensed Matter and Materials Physics Conference 1996 (CMMP-96) University of York, 17-19 December 1996 Abstract published in the Conference Handbook, “Uniaxial-Stress / DLTS Studies on EL6 Lattice Defects in HGF-Grown Gallium Arsenide" S J Hartnett and D W Palmer, 1995 UK Institute of Physics Condensed Matter and Materials Physics Conference - 1995 (CMMP-95), University of Liverpool, 19-21 December 1995: Abstract published in the Conference Handbook, Page 135. “Group-III-Element Broadening of the Electronic Level of the EL2 defect in InGaAs and AlGaAs" A C Irvine and D W Palmer, 1995 UK Institute of Physics Condensed Matter and Materials Physics Conference - 1995 (CMMP-95), University of Liverpool, 19-21 December 1995: Abstract published in the Conference Handbook “Demonstration of gallium-defect annealing at 280K in irradiated GaAs and AlGaAs" A C Irvine and D W Palmer, 1994 Physical Review B 49 (1994) 5695-5698 “A model for the strain-relaxation-induced point-defect production" during growth of InGaAs on GaAs A C Irvine and D W Palmer, 1994 UK Institute of Physics / Semiconductor Group Meeting "Strained Layer Structures and Devices - 1994" University of Sussex, September 1994: Abstract published Meeting Handbook “AlGaAs as a tool for investigating defect properties in GaAs" D W Palmer, 199 Invited Review Proc, Tenth Hellenic Conference on Solid State Physics (Delphi, Greece, Sept. 1994) page 515 “Rate of production of radiation damage in diamond, especially by electrons in the MeV range" D W Palmer, 1994 In "Properties and Growth of Diamond" (Published by INSPEC, Institute of Electrical Engineers, London, 1994, Editor, G.Davies) Section 6.1, pages 143-152 “Direct evidence for gallium-defect annealing near 280K A C Irvine, D W Palmer and J S Roberts, 1994 Materials Science Forum 143-147 (1994) 289-293 (Proc, 17th Internat. Conf. on Defects in Semiconductors (ICDS-17), Gmunden, Austria, 1993) “Capacitance Methods for Characterisation of Semiconductors"(23 pages) D W Palmer,. 1993 Proceedings. Fifth Tropical College on Applied Physics, May/June 1993 at the School of Physics, Universiti Sains Malaysia, Minden, Penang, Malaysia “Radiation Damage in Semiconductors" (23 pages) D W Palmer, 1993 Proceedings, Fifth Tropical College on Applied Physics, Man/June 1993 at the School of Physics, Universiti Sains Malaysia, Minden, Penang, Malaysia “Energy-band offsets" (a question) D W Palmer, 1993 Phil. Trans. Roy. Soc. London 344 (1993) 585-586 Proceedings of a Meeting held at the Royal Society, London, 03-04 March 1993 on 'Semiconductor Growth, Surfaces and Interfaces' “ EL2 Concentration-Distance Profile and Lattice Strain in In(0.045)Ga(0.955)As MBE-Grown on GaAs" A C Irvine, D W Palmer and D J Dunstan, 1992 Institute of Physics Condensed Matter and Materials Physics Conference - 1992 (CMMP-92) University of Sheffield, 15-17 December 1992: Abstract published in the Conference Handbook “First observation of the EL2 lattice defect in indium gallium arsenide grown by molecular beam epitaxy" A C Irvine and D W Palmer, 1992 Physical Review Letters 68 (1992) 2168-2171 “Electron trapping defects in MBE-grown relaxed n-In 0.05 Ga 0.95As on gallium arsenide" A C Irvine, L K Howard, D W Palmer, 1992 Materials Science Forum 83-87 (1992) 1291-1296 (Proc, of the 16th Internat. Conf. on Defects in Semiconductors, Lehigh University, USA, 1991) "Irradiation-induced electronic levels removed in the 280K defect-annealing stage of n-GaAs" W O Siyanbola, A C Irvine and D W Palmer, 1992 Materials Science Forum 83-87 (1992) 997-1002 (Proc, of the 16th Internat. Conf. on Defects in Semiconductors, Lehigh University, USA, 1991) “Electronic energy levels of defects that anneal in the 280K stage W O Siyanbola and D W Palmer, 1991 Physical Review Letters 66 (1991) 56-59 “Characterisation of semiconductors by capacitance methods" D W Palmer, 1990, Invited Review: In 'Growth and Characterisation of Semiconductors', (Adam Hilger Ltd, 1990; Eds. R A Stradling and P C Klipstein) pages 187-224 “Optical-MCTS of proton-irradiated n-type gallium arsenide" W O Siyanbola and D W Palmer, 1990 Solid State Communications 74 (1990) 209-213. “Low temperature annealing of deep electron traps produced by proton W O Siyanbola and D W Palmer, 1990 Semicond. Sci. Technol. 5 (1990) 7-15 “Comparison of Minority-Carrier Traps in Proton- and Helium-Ion- Irradiated N-GaAs" W O Siyanbola and D W Palmer, 1989 UK Institute of Physics Solid State Physics Conference - 1989, University of Warwick, 19-21 December 1989: Abstract published in the Conference Handbook# “Annealing Effects near 370K on DLTS Peaks in n-Al(0.26)Ga(0.74) As" A C Irvine and D W Palmer, 1989 UK Institute of Physics Solid State Physics Conference - 1989, University of Warwick, 19-21 December 1989: Abstract published in the Conference Handbook “The effects of surface topography in nuclear microprobe Rutherford backscattering analysis" C P Hobbs, J W McMillan and D W Palmer, 1988 Nuclear Instruments & Methods in Phys Res B: Beam Interactions with Materials and Atoms: 30 (1988) 342–348 “Low temperature annealing of deep level defects in proton-implanted n-GaAs" W O Siyanbola and D W Palmer, 1988 .UK Institute of Physics Solid State Physics Conference - 1988, University of Nottingham, December 1988: Abstract published in the Conference Handbook “A deep trap in AlGaAs LEDs: electric-field enhancement of electron emission from DX centres ?." D W Palmer, E K Evangelou and G E Giakoumakis, 1988 UK Institute of Physics Solid State Physics Conference - 1988, University of Nottingham, December 1988: Abstract published in the Conference Handbook “Photo-voltaic study of irradiation effects in AlGaAs/GaAs quantum well structures" G E Zardas, D W Palmer and P Blood, 1988 Fourth Greek Conference on Solid State Physics -1988, held in Athens, Greece, in September 1988 "Trapping of interstitials and vacancies at solute molybdenum atoms in iron/(0.3 atomic % Mo) studied by the ion-channelling/lattice-location technique"<./B> M M Kijek and D W Palmer, 1986 Proc. International Conference on Vacancies and Interstitials in Metals, Berlin, 14-19 Sept 1986 Published in Materials Science Forum 15-18 (1987) 703-708 “Nuclear-reaction methods to measure boron diffusion in metallic glasses” MM Kijek, D W Palmer and B Cantor, 1986 ActaMetall 34 (1986) 1455-1466 “Channeling measurement of irradiation-induced lattice-site change of oxygen atoms in niobium at 10 and 293K" C D Meekison, R E Kaim and D W Palmer, 1986 Physical Review B 33 (1986) 3770-3777 “Properties of the DX Defect Centre in Aluminium Gallium Arsenide" G E Giakoumakis, D W Palmer and A A Rezazadeh, 1986 Second Greek Solid State Physics Conference, 1986 held in Ioannina, Greece, 30th Sept to 03rd October 1986 > “Study of the Defects Produced in Silicon Crystals by Bombardment" with Low Helium-Ion Doses at Temperatures of 10-280K” D Georgiacodis and D W Palmer, 1986 Second Greek Solid-State Physics Conference, 1986 held in Ioannina, Greece, 30th Sept to 03rd October 1986     “Proceedings of the Fourth Conference on 'Low Energy Ion Beams', held at the University of Sussex, 07-10 April 1986 D W Palmer, W A Grant and J S Colligon (Guest Editors), 1986 Vacuum 38 (1986) Numbers 11/12 “The role of electron traps in the dc-current gain of GaA/GaAlAs heterojunction bipolar transistors prepared by MBE" A A Rezbazadeh, J A Barnard, D W Palmer and T M Kerr, 1985 UK Institute of Physics / Electronics Group Meeting -1985, Imperial College, University of London, 20th November 1985: Abstract published in the Meeting Handbook. “An electron-trapping defect level associated with the 235K annealing stage in electron-irradiated n-GaAs" A A Rezazadeh and D W Palmer, 1985 J. of Phys. C: Solid State Physics 18 (1985) 43-54. “Self-diffusion of nickel in nickel-niobium metallic glasses" M M Kijek and D W Palmer, 1984 UK Institute of Physics Solid State Physics Conference - 1984, University of Southampton, December 1984: Abstract published in the Conference Handbook “Channelling Studies of Defect-Impurity Interactions in Fusion-Technology Metals and Alloys” D W Palmer and M Kijek, 1982 (SERC Research Grant GR/B/85395) Proc. (Editor: J H Aram) of the Meeting of SERC Research Grant Holders on “Fusion Technology Research” held at The Cosener’s House, Abingdon, on 28 & 29 Sept 1982 “Channelling and iono-luminescence spectra of cubic structured zinc sulphide" T Taguchi and D W Palmer, 1982 Phys. Stat. Sol. (a) 69 (1982) K55-59 “Radiation damage structures in materials" D W Palmer, 1981 Inst. of Phys. Physics Bulletin 32 (1981) 242-243 “Helium-ion irradiation damage in GaAs at 293K and 80K studied by carrier trapping and DLTS techniques" A A Rezazadeh and D W Palmer, 1981 Inst. Phys. Conf. Series 59 (1981) 317-322 (Proc, Internat. Conf. on Defects and Radiation Effects in Semiconductors, Oiso, Japan, 1980) "Diffusion of boron and gold in nickel-niobium alloys" M Kijek, B Cantor and D W Palmer, 1981 Materials Research Society Annual Meeting - 1981, Boston, USA, Abstract published in the Meeting Handbook, as Paper F.11.24 "Reviwe of 'Ion-Solid Interactions - A Comprehensive Bibliography by W M Gibson and H H Teitelbaum" (INSPEC, 1652 pages in three volumes, 1980) D W Pakner, 1981 J. of Nuclear Materials 96 (1981) 375 - 376 "Depth Analysis, by Rutherford backscattering spectroscopy, of ion-exchanged optical wave-guides" D J O'Connor, D W Palmer, P D Townsend, J Morris, C W Pitt, Z Neuman and L M Walpita, 1981 Nucl. Instr. and Methods 182/183 (1981) 797-800 "Helium-ion and electron irradiation damage in niobium" C D Meekison and D W Palmer, 1981 Institute of Physics Meeting 'Radiation Damage Structures in Materials' 1981, held at the University of Liverpool, 07th April 1981: Abstract published in the Meeting Handbook. "Irradiation-induced defects in semiconductors" D W Palmer, 1980 Inst. of Phys. Physics Bulletin 31 (1980) 308 "High-energy ion scattering for surface and interface studies" D W Palmer, 1980 Analytical Proceed. of the Royal Institute of Chemistry 17 (1980) 475-477 (Proceedings of Royal Inst. of Chemistry Symposium on Modern Techniques for Surface Characterisation, held at University of Durham, 1979) "Developments in ion implantation" “D W Palmer, 1980 Novocti Fiziki Tverdogo Tela (Solid State Physics News) 10 (1980) 7-64 (Volume entitled 'Ion Implantation in Semiconductors and Other Materials'; edited by V Vavilov; published by MIR, Moscow, 1980) This is a full translation in Russian of my IAEA review paper of 1977/78 "Proton-induced defects in ZnS studied by means of proton-excited blue emission and channelling measurements" T Taguchi and D W Palmer, 1980 UK Institute of Physics Meeting (Atomic Collisions in Solids / Electronics Groups) 'The Production and Device Applications of Irradiation-Induced Defects in Semiconductors', held in London, UK, 25 June 1980: Abstract published in the Conference Handbook "100 keV proton-induced defects in ZnSe and ZnTe" T Taguchi and D W Palmer, 1980 British Association of Crystal Growth Conference on II-VI Compounds - 1980 University of Lancaster, 14-16 February 1980 "Comparison of electron-trap irradiation damage in VPE gallium arsenide bombarded with electrons, protons and helium ions" A A Rezazadeh and D W Palmer, 1980 UK Institute of Physics Meeting (Atomic Collisions in Solids / Electronics Groups) on 'The Production and Device Applications of Irradiation-Induced Defects in Semiconductors' held in London, UK, 25 June 1980: Abstract published in the Meeting Handbook "Mechanisms of defect production during irradiation of semiconductors" D W Palmer, 1980 Invited Lecture at the UK Institute of Physics Meeting (Atomic Collisions in Solids / Electronics Groups) on 'The Production and Device Applications of Irradiation-Induced Defects in Semiconductors' held in London, UK, 25 June 1980: Abstract published in the Meeting Handbook "Comparison of the 3He / 16O and 1H / 18O prompt nuclear reactions for lattice location measurements of oxygen in niobium" R E Kaim and D W Palmer, 1979 J. Radio-analytical Chemistry 48 (1979) 295-310 "Irradiation-energy dependence of proton bombardment damage in germanium" P Barker and D W Palmer, 1979 Inst. Phys,. Conf. Series 46 (1979) 230-236 (Proc, Internat. Conf on Defects and Radiation Effects in Semiconductors, Nice, 1978) " A channelling study of helium-ion irradiation damage in niobium I. Effect of dissolved oxygen" R E Kaim and D W Palmer, 1979 Phil. Mag. A 39 (1979) 355-377. "A channelling study of helium-ion irradiation damage in niobium II. Effect of irradiation temperature" R E Kaim and D W Palmer, 1979 Phil. Mag. A 39 (1979) 379-387. "Defect-Oxygen Interactions in Niobium Studied by Ion-Channelling Techniques" D W Palmer and R E Kaim, 1979 nstitute of Physics Solid State Physics Conference, University of Warwick, June 1979, Paper A14.2 “Irradiation-induced lattice-site change of oxygen in niobium" R E Kaim and D W Palmer, 1979 Phil. Mag. A 40 (1979) 279-296 "Ion implantation and depletion in germanium at low temperatures" S A El-Atawy, P E Clegg and D W Palmer, 1979 Infra-Red Physics 19 (1979) 185-189 "Temperature dependence of critical angles for axial channelling: protons in MgO" S D Mukherjee and D W Palmer , 1979 Phys. Lett. 74A (1979) 97-100 S D Mukherjee and D W Palmer, 1979 Phys. Lett. 69A (1979) 356-359. "Interactions of ion beams with solids" D W Palmer, 1979, Invited Review Proceedings of the Physics Symposium of the Bangladesh Physical Society, held in Dacca, Bangladesh, 1979 (Bangladesh Physical Society, 1981) pp 31-54 "Developments in ion implantation" D W Palmer, 1978 Invited review presented at an IAEA Advisory Meeting held in Costa Rica, 1977 Published in "From Idea to Application - Some Selected Nuclear Techniques in Research and Development" (IAEA Vienna, 1978) pp 215-259. "Analysis for 16O by 3He-Induced Prompt Nuclear Reactions" D W Palmer and R E Kaim, 1978 Fifth Symposium on Recent Developments in Activation Analysis, Oxford 17-21 July 1978 “Temperature Dependence of Axial Dechannelling of Protons in <111> MgO” S D Mukherjee and D W Palmer, 1978 Indian J of Pure & Appl Physics 16 (1978) 815-820 “Analysis and Depth Profiling by Elastic Scattering - Techniques Worthy of Your Energies” D W Palmer, 1978 Fifth Symposium on Recent Developments in Activation Analysis, Oxford 17-21 July 1978 "Defect-oxygen interactions in niobium studied by ion-channelling techniques" D W Palmer and R E Kaim, 1978 Institute of Physics 16th Annual Solid State Physics Conference - 1978 Abstract published in the Conference Handbook "Temperature dependence of defect production during proton irradiation of n-type silicon" G N van Wyk and D W Palmer, 1977 Inst. Phys. Conf. Series 31 (1977) 506 (Proc., Internatiomal. Conf. on Radiation Effects in Semiconductors, Dubrovnik, 1976) "Ionisation and subthreshold effects in defect creation and annihilation in semiconductors" D W Palmer, 1977 : Invite Review Inst. Phys. Conf. Series 31 (1977) 144-163 (Proc. International Conf. on Radiation Effects in Semiconductors, held in Dubrovnik, 1976) "Thermal annealing of defects produced in GaAs by proton irradiation at 80K" D J Titley and D W Palmer. 1975 UK Institute of Physics Conference on ‘The Application of Ion Beams to Materials’ Univerity of Warwick, 08-10 Sept. 1975: Abstract published in the Conference Handbook. "Diff erences in defect production and annealing processes in boron- and carbon-irradiated germanium " P J MacDonald and D W Palmer, 1975 Inst. Phys. Conf. Series 23 (1975) 504-512 (Proc. Internat. Conf. on Lattice Defects in Semiconductors, Freiburg, 1974) "Ion-Irradiation, -Implantation and -Channelling Effects in Solids" D W Palmer, 1975 Invited review presented at a Panel Meeting of the International Atomic Energy Agency, on the Utilisation of Low Energy Accelerators, held in Zagreb, 1974 IAEA 171 (1975) 23-67 > "Light ion irradiation experiments suggest an ionization mechanism for silicon" H J Pabst and D W Palmer, 1974 Radiation Effects 21 (1974) 135-136 "Reports on Current Research Projects" D W Palmer, 1973 SRC 'Ion Implantation Panel Report 1973' pp 62-65 "Ion-Beam Channelling and Back-Scattering Effects in Crystals" D W Palmer, 1973 Invited Lecture at the Conference of the British Association of Crystal Growth - 1973 University of York, September 1973. Abstract published in the Conference Booklet > "Indication for an ionization damage process in light-ion irradiation damage in silicon" H J Pabst and D W Palmer, 1973 Proc. Internat. Conf. on Atomic Collisions in Solids, held at Gatlinburg, USA, 1973 (Published by Oak Ridge National Laboratory, 1974) 141-147. "Irradiation-induced defects studied by the channelling method in p- and n-type silicon" H J Pabst and D W Palmer, 1973 Inst. of Physics Conf. Series 16 (1973) 438-446 Proc. Internat. Conf. on "Radiation Damage and Defects in Semiconductors" held at the University of Reading, July 1972, "The annealing behaviour of gallium phosphide in the region 110-500K after 300 keV neon irradiation" T G Williams and D W Palmer, 1971 Proc. Internat. Conf. on "Ion Implantation in Semiconductors" held at Garmisch-Partenkirken, 1971 (Springer-Verlag: editors I Ruge and J Graul), pp 205-211. "Study of atomic displacements in He+-irradiated silicon and a silicon-germanium alloy through Rutherford scattering" P Baruch, F Abel, C Cohen, M Bruneaux, D W Palmer and H Pabst, 1971 Radiat. Effects 9 (1971) 211-217 (Proc. Internat. Conference on Radiation Effects in Semiconductors, held at the University of Albany, Albany, New York State, 1970) "Proc. of the International Conference on 'Atomic Collisions Phenomena in Solids' held at the University of Sussex 1969" Editors: D W Palmer, M W Thompson and P D Townsend, 1970, (North Holland Publisgers, 1970) "Orientation dependence of Rutherford scattering of protons from quartz" Derek W Palmer and E D'Artemare, 1968 Phil. Mag. 17 (1968) 1195-1205 "The design of a velocity selector for long wavelength neutrons" C D Clark, E W J Mitchell, D W Palmer and I H Wilson, 1966 J. Sci. Instrum. 43 (1966) 1-5. "Oxygen diffusion in quartz studied by proton bombardment" D W Palmer, 1965 Nucl. Intrum. and Methods 38 (1965) 187-191 "Study of oxygen diffusion in quartz by using the nuclear reaction 16O(p,alpha) 15N " A Choudhury, D W Palmer, G Amsel, H Curien and P Baruch, 1965 Solid State Communications 3 (1965) 119-122 "La Diffusion des Atomes d'Oxygène dans le Quartz, Etudiée a l'aide de la Réaction Nucléaire 16O(p,alpha) 15N " A Choudhury, D W Palmer, H Curien et P Baruch , 1965 Bulletin de la Societé Française de Minéralogie et de Crystallographie 88 (Janvier1965) No. 1, page R38 [120 Blvd Saint Germain, 75280 Paris 06, France : Masson Editeur] "The International Symposium on Radiation Damage in Semiconductors, held in Royaumont, France 1964: Report" D W Palmer, 1964 Brit. J. Appl. Phys. 15 (1964) 1473-1476 "Evidence for one-dimensional motion of defects in diamond" C D Clark and D W Palmer, 1962v UK Institute of Physics Conference on Diffusion and Mass Transport in Solids - 1962 University of Reading, 10-11 April 1962: Abstract published in the Conference Handbook. “Annealing of Electron Irradiation Damage in Diamond” D W Palmer, 1961 PhD Thesis, University of Reading, UK, November 1961. "Annealing of radiation damage in diamond" C D Clark and D W Palmer, 1961 Diamond Conference, University of Bristol, 18th - 19th July 1961 Abstract published in the Confrence Booklet. "Thermal annealing of damage produced by the 2.0 MeV electron irradiation of type IIa diamond" D W Palmer and C D Clark, 1960 Proc. of the Fourth International Symposium on the Reactivity of Solids, held in Amsterdam, 30th May to 04th June 1960 (Elsevier Publishing Company, 1961; Editor-in-Chief, J H De Boer) pp 435-445 "Annealing of the Optical Absorption Produced in Diamond by 2.0 MeV Electron Irradiation" C D Clark and D W vPalmer, 1960 UK Institute of Physics / Physical Society Conference on Diamond Physics - 1960, held at the University of Reading, 22-23 September 1960 Abstract published in the Conference Handbook. “Optical properties of electron irradiated diamond” C D Clark, E W J Mitchell and D W Palmer, 1960 Diamond Conference , University of Bristol, 09-10 July 1959 Abstract published in the Conference Handbook.

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